SIJ478DP-T1-GE3 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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SIJ478DP-T1-GE3
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حجم فایل
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99.051
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Vishay Intertech SIJ478DP-T1-GE3
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
5W;62.5W
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Total Gate Charge (Qg@Vgs):
54nC@10V
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Drain Source Voltage (Vdss):
80V
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Input Capacitance (Ciss@Vds):
1855pF@40V
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Continuous Drain Current (Id):
60A
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Gate Threshold Voltage (Vgs(th)@Id):
2.6V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
8mΩ@10V,20A
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Package:
PowerPAK-SO-8
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Manufacturer:
Vishay Intertech
